gaas – -Translation – Keybot Dictionary

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Show textShow cached sourceOpen source URL	Today, ASELSAN’s radar product portfolio includes air defense, reconnaissance and surveillance, airborne imaging and weapon locating radar systems. ASELSAN radar system expertise covers frequency bands L through Ka Band and encompasses advanced radar technologies such as active phased array, GaAs and GaN based Transmit/Receive Modules.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine aselsan.com.tr as primary domain	ASELSAN, 1991 yılında alınmış olan Savunma Sanayi İcra Komitesi kararı doğrultusunda ülkemizin Radar Teknoloji Merkezi olarak Silahlı Kuvvetlerimizin radar ihtiyaçlarının gelişmiş teknolojiye sahip radar sistemleri ile karşılanması için bu alandaki faaliyetlerini artırarak sürdürmektedir.

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Show textShow cached sourceOpen source URL	Since the width of the band gap represents a certain energy corresponding to a particular wavelength, one tries to alter the width selective in order to obtain certain colors of light emitting diodes (LED). This may be achieved by combining different materials. Gallium arsenide (GaAs) has a band gap of 1.4 eV (electron volts, at room temperature) and thus emits red light.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine halbleiter.org as primary domain	Da die Breite der Bandlücke einer bestimmten Energie und somit einer bestimmten Wellenlänge entspricht, versucht man, die Bandlücke gezielt zu verändern um so bestimmte Farben bei Leuchtdioden zu erhalten. Dies kann u.a. durch Kombination verschiedener Stoffe erreicht werden. Galliumarsenid (GaAs) hat eine Bandlücke von 1,4 Elektronenvolt (eV, bei Raumtemperatur) und strahlt somit rotes Licht ab.

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Show textShow cached sourceOpen source URL	Activities of the department are focused on the characterization of materials and structures destined for use in optoelectronics and microelectronics. Major attention has been paid to III-V materials, binaries GaP, InP, GaAs and GaSb, ternaries InGaP, AlGaAs and quaternary InGaAsP.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ufe.cz as primary domain	Výzkumný tým se zaměřuje na studium elektronických a optických jevů na povrchu a rozhraní nanomateriálů vyvolané dopadem fotonů, iontů, elektronů a adsorbcí plynů za účelem jejich využití pro senzorické aplikace, jako zdrojů světelného záření a pro vylepšení nanodiagnostických schopností analytických metod.

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Show textShow cached sourceOpen source URL	Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources
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Show textShow cached sourceOpen source URL	GaAs and GaP Wafer Scribing
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Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	GaAs 和 GaP晶圆划线

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Show textShow cached sourceOpen source URL	GaAs Triple Junction cell
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Show textShow cached sourceOpen source URL	Promotion of local initiatives for natural resource protection (PILPRN project), implemented by the NGO GAAS MALI.
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Show textShow cached sourceOpen source URL	KU PA 10201050-30 A, GaAs-FET Power Amplifier
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Show textShow cached sourceOpen source URL	GaAs Solar Cell - Flexible Solar Paddle: Approx. 5.3kW(EOL)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine jaxa.jp as primary domain	楕円軌道：2日9周回準回帰軌道（当初計画：静止衛星軌道（東経121度））

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Show textShow cached sourceOpen source URL	German Association for American Studies (GAAS)
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Show textShow cached sourceOpen source URL	Gallium arsenide (GaAs)
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Show textShow cached sourceOpen source URL	Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
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His key contributions are development of the Poisson brackets method of design of nonimaging optics, the development of the SMS design method for nonimaging optics, the first rigorous proof of the Edge Ray Principle for continuous systems, the introduction of a new etendue invariant in the field (for 2D-subdomains of phase space) in nonimaging optics, the calculation of the thermodynamic limits of concentration for non-homogeneous extended sources, and development of the theory and applications of internal and external confinement limits in solar cells, which allowed the construction of a concentration system with GaAs and Si cells

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Miñano ha hecho muchas contribuciones significativas al campo de la óptica sin formación de imagen. Sus trabajos en el área de ópticas para iluminación y concentración son incontables, innovadores y prácticos. Su investigación ha tenido un enorme impacto en el área de los concentradores solares, y en la eficiencia de la iluminación con fuentes LED. Sus contribuciones principales son: el desarrollo del método de diseño de ópticas sin formación de imágenes de lodsparéntesis de Poisson el desarrollo del sistema de diseño SMS para ópticas sin formación de imagen, la primera demostración rigurosa del principio del rayo del borde para sistemas continuos, la introducción de una nueva invariancia en el campo de la eficacia óptica (para subdominios 2D del espacio de fases) en ópticas sin formación de imagen, el cálculo de los límites termodinámicos de la concentración para fuentes extensas no homogéneas, y el desarrollo de la teoría y aplicaciones de los límites de confinamiento interno y externo en células solares, que ha hecho posible la construcción de un sistema de concentración con células de GaAs y Si.

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Show textShow cached sourceOpen source URL	klienditugi@gaas.ee
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Show textShow cached sourceOpen source URL	Gallium arsenide (GaAs)
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Its radiation has unconventional (for existing lasers) spectro-dynamical and correlation properties, since it is produced in a low-Q multi-mode resonator, where the lifetime of photons is short compared with the lifetime of an optical polarization of the quantum dots (E. R. Kocharovskaya, V. V. Kocharovsky, Vl. V. Kocharovsky). Such lasers, which are called D-class lasers and have not been realized before, can be made of the GaAs/InGaAs heterostructures with several layers of submonolayer quantum dots.

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Впервые показано также, что на основе последних достижений нанотехнологии выращивания массивов субмонослойных квантовых точек и разработанных в ИПФ методов нелинейной динамической селекции мод благодаря распределенной обратной связи возможно создание уникального сверхизлучающего гетеролазера миллиметровой длины с КПД более 50 %. Он способен генерировать последовательности мощных (мультиваттных) сверхкоротких (пикосекундных) импульсов когерентного излучения при непрерывной инжекционной или оптической накачке в отсутствие специальной синхронизации мод и рассчитан на решение сложных задач динамической спектроскопии и обработки информации. Его излучение обладает необычными (для существующих лазеров) корреляционными и спектрально-динамическими свойствами, поскольку возникает в низкодобротном многомодовом резонаторе, время жизни фотонов в котором мало по сравнению со временем жизни оптической поляризации квантовых точек (Е. Р. Кочаровская, В. В. Кочаровский, Вл. В. Кочаровский). Для подобных лазеров, называемых лазерами класса D и ранее не реализованных, спроектированы (совместно с ФТИ РАН) необходимые GaAs/InGaAs-гетероструктуры с несколькими слоями субмонослойных квантовых точек, обладающие рекордной спектральной и пространственной плотностью состояний с достаточно большим временем релаксации их оптической поляризации.

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The CHRocodile MI5 sensor is perfectly suited to measure thicknesses of Si and GaAs up to 1mm. Transparent films and coatings can be measured up to a thickness of 2,5 mm. The CHRocodile MI5 modular optical sensor works with infrared light and is perfectly suited for thenon-contact thickness measurement of visually non-transparent materials from one side.

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Der CHRocodile MI5 Sensor misst die Schichtdicke von Silizium und GaAs-Materialien bis zu 1mm. Transparente Folien und Lacke können bis zu einer Schichtdicke von 2,5 mm gemessen werden. Der Sensor arbeitet mit Infrarotlicht und eignet sich perfekt für die berührungslose Dickenmessung auch visuell nicht transparenter Materialien von einer Seite. Für den Industriellen Einsatz können bis zu 5 Kanäle in einem 19˝ Einschub konfiguriert werden.

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EXPERIENCED AUDITOR—An individual (whether internal or external to the office) who has practical audit experience and a reasonable understanding of (i) audit processes, (ii) GAAS and applicable legal and regulatory requirements, (iii) the business environment in which the entity operates, and

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DOSSIER D’AUDIT — Le ou les fichiers ou autres supports d'information, physiques ou électroniques, contenant les documents qui constituent la documentation relative à une mission d'audit donnée. Le terme « dossier d’audit » désigne le fichier électronique (TeamMate) et toute copie papier des dossiers externes qui contiennent la documentation d’audit (y compris les dossiers papier relatifs à des missions pour lesquelles il n’y a pas de dossier de mission électronique).

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Show textShow cached sourceOpen source URL	Specifically, our 2011 inspections found deficiencies in the application of GAAS in firms of all sizes. The Big Four firms, which audit 94 per cent of reporting issuers by market capitalization, had a GAAS deficiency rate of 20-26 per cent on the files we inspected.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine cpab-ccrc.ca as primary domain	Ainsi, le travail effectué à l’égard de ces dossiers n’a pas permis d’étayer pleinement l’opinion d’audit, de sorte qu’il a fallu accomplir du travail supplémentaire. Dans quelques cas, l’audit présentait davantage de problèmes fondamentaux, et quelques retraitements ont été nécessaires.

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Show textShow cached sourceOpen source URL	24/11/13 OÜ Head co-operated with AS Eesti Gaas to work out the business plan for...
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Show textShow cached sourceOpen source URL	13. M. M. de Lima, Jr., W. Seidel, F. Alsina and P. V. Santos. Focusing of surface-acoustic-wave fields on [100] GaAs surfaces. Journal of Applied Physics. 94, 7848-7855 (2003).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ejta.org as primary domain	9. A. Gantner, Mathematical modeling and numerical simulation of piezoelectrical agitated surface acoustic waves. Ph.D. Thesis. Faculty of Mathematics and Natural Sciences, University of Augsburg, Germany (2005).

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Show textShow cached sourceOpen source URL	English , Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices , Physica E , vol.42 (10) (p.2655 - 2657) , 2010.09 , R. Kido,A. Satake,and K. Fujiwara
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine research02.jimu.kyutech.ac.jp as primary domain	英語 、 Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices 、 Physica E 、 42巻 10号 （頁 2655 ～ 2657） 、 2010年09月 、 R. Kido,A. Satake,and K. Fujiwara

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Show textShow cached sourceOpen source URL	Goals of the GAAS
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Its radiation has unconventional (for existing lasers) spectro-dynamical and correlation properties, since it is produced in a low-Q multi-mode resonator, where the lifetime of photons is short compared with the lifetime of an optical polarization of the quantum dots (E. R. Kocharovskaya, V. V. Kocharovsky, Vl. V. Kocharovsky). Such lasers, which are called D-class lasers and have not been realized before, can be made of the GaAs/InGaAs heterostructures with several layers of submonolayer quantum dots.

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Впервые показано также, что на основе последних достижений нанотехнологии выращивания массивов субмонослойных квантовых точек и разработанных в ИПФ методов нелинейной динамической селекции мод благодаря распределенной обратной связи возможно создание уникального сверхизлучающего гетеролазера миллиметровой длины с КПД более 50 %. Он способен генерировать последовательности мощных (мультиваттных) сверхкоротких (пикосекундных) импульсов когерентного излучения при непрерывной инжекционной или оптической накачке в отсутствие специальной синхронизации мод и рассчитан на решение сложных задач динамической спектроскопии и обработки информации. Его излучение обладает необычными (для существующих лазеров) корреляционными и спектрально-динамическими свойствами, поскольку возникает в низкодобротном многомодовом резонаторе, время жизни фотонов в котором мало по сравнению со временем жизни оптической поляризации квантовых точек (Е. Р. Кочаровская, В. В. Кочаровский, Вл. В. Кочаровский). Для подобных лазеров, называемых лазерами класса D и ранее не реализованных, спроектированы (совместно с ФТИ РАН) необходимые GaAs/InGaAs-гетероструктуры с несколькими слоями субмонослойных квантовых точек, обладающие рекордной спектральной и пространственной плотностью состояний с достаточно большим временем релаксации их оптической поляризации.

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Show textShow cached sourceOpen source URL	The MVV 1296-VOX has two stages to gain enough amplification for longer feed lines, also. The input stage is equipped with a low-noise microwave GaAs FET, the second stage uses a microwave IC (MMIC). The amplification is continuously adjustable, which helps to adjust to particular cable lengths.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.com as primary domain	The MVV 1296-VOX mast pre-amp is a low-noise antenna pre-amplifier in a double-shelled housing. The outer housing made of ABS is weatherproof and suited for mast mounting. The inner metal housing ensures a high shielding factor against unwanted irradiation and protects the components of the amplifier against harmful environmental influences effectively.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.com as primary domain	L'MVV 1296-VOX è un preamplificatore d'antennaa a basso rumore in un alloggiamento a doppia schermatura. L'involucro esterno in ABS è resistente alle intemperie e adatto per il montaggio a palo. Il contenitore metallico interno assicura un elevato fattore di schermatura contro le interferennze e protegge efficacemente i componenti dell'amplificatore dalle condizioni ambientali più estreme.

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Show textShow cached sourceOpen source URL	Sol Voltaics: GaAs Nanowires for Solar Cells Get $6M
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Show textShow cached sourceOpen source URL	S. Koh, T. Kondo, Y. Shiraki, and R. Ito: “GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices,” J. Cryst. Growth 227−228 (2001) 183−192.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine castle.t.u-tokyo.ac.jp as primary domain	Y. Hase, K. Kumata, S.S. Kano, M. Ohashi, T. Kondo, R. Ito, and Y. Shiraki: “A New Method for Determining the Nonlinear Optical Coefficients of Thin Films,” Appl. Phys. Lett. 61 (1992) 145−146.

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Show textShow cached sourceOpen source URL	Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers, Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atsushi Koizumi, and Shinji Nozaki, 2012.07, Papers
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine dma.jim.osaka-u.ac.jp as primary domain	Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers，Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atsushi Koizumi, and Shinji Nozaki，2012年07月，学術論文

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Show textShow cached sourceOpen source URL	T. Kaizu, Y. Imanaka, K. Takehana, T. Takamasu : “Magnetotransport properties of Ytterbium doped AlxGa1-xAs/GaAs two-dimensional electron systems” EP2DS-18/MSS-14 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 42[4] (2010) 1126-1129
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine samurai.nims.go.jp as primary domain	2009/12/12 : 木俣基, 山口尚秀, 薩川秀隆, 原田淳之, 小玉恒太, 寺嶋太一, 宇治進也, 今中康貴, 竹端寛治, 高増正, 今井基晴, 佐藤晃, 松田真生, 田島裕之, 内藤俊雄, 稲辺保, 木方邦宏, 李哲虎, 鬼頭聖, 永崎洋, 伊豫彰, 深澤英人, 小堀洋, 播磨尚朝 : “低次元強相関系の強磁場物性測定” 神戸大学物性研究室セミナー

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Show textShow cached sourceOpen source URL	two independent final power amplifiers based on GaAs hybrid circuit,
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Show textShow cached sourceOpen source URL	1 Laser Diodes (GaAs)
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Show textShow cached sourceOpen source URL	Materials of Photonic Technologies (LiNbO3, Si, Ge, GaAs, InP, Polymers)
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The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with Si technology. The focus was primitively placed on development of a Si-compatible tool for chemical vapor deposition (CVD) of gallium arsenide (GaAs).

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gebied. Het werk dat gepresenteerd wordt in deze thesis is tot stand gekomen in de licht van dit doel: het samenbrengen van III-V halfgeleider technologie met Si technologie. De focus was eerst gelegd op de ontwikkeling van een Si compatible apparaat voor Chemical VaporDeposition (CVD) van galliumarseen (GaAs). Hiervoor is een Si/SiGe CVD reactor, de ASMI Epsilon 2000, uitgebreid met een TriMethylGallium (TMGa) bubblersysteem met extra buizen om de depositie van zowel GaAs als de standaard Si en SiGe deposities toe te staan. Van groot belang was het toepassen van een lage arseenconcentratie (AsH3): 0.7%, een minstens tien keer zo lage hoeveelheid als wat normaal wordt gebruikt in MOCVDs. De bijbehorende lage concentratie van TMGa betekent dat de vervuiling van de reactor kamer met gallium of arseen zo laag is dat de gebruikelijke hoge kwaliteit van gedopeerd Si- en SiGe-deposities nog steeds kunnen worden behaald in dezelfde reactorkamer. Hierdoor kon het onderzoek gericht op het ontwikkelen van unieke halvegeleidercomponenten waar de samenvoeging van materialen zoals gallium (Ga), arseen (As) en boor (B), met Si en Ge, in een de zelfde reactor, worden bewerkstelligd. Voor het eerst konden depositiecycli met lagen van verschillende combinaties van deze III, IV, V elementen worden uitgevoerd zonder vacuümonderbreking. Dit was belangrijk, niet alleen voor de groei van goede kwaliteit GaAs epitaxie en kristallijn Ge-op-Si, maar ook voor het realiseren van junctiediodes met deze materialen. Voornamelijk de realisatie van p+n Si diodes van uitzonderlijke kwaliteit was mogelijk gemaakt door de depositie van puur gallium (PureGa) of puur boor (PureB) voor het p+ gebied. De combinatie van zowel PureGa als PureB technieken op kristallijn Ge-op-Si is geïmplementeerd voor ideale Ge-op-Si p+n juncties met wereldrecord lage verzadigingsstromen. De term PureGaB is geïntroduceerd voor deze technologie.