gaas – Übersetzung – Keybot-Wörterbuch

  salanguages.com  

Show textShow cached sourceOpen source URL	MMIC (Monolithic Microwave Integrated Circuits) overcome the limitations of silicon microchips and opens a new era in the design of electronic components, which are integrated circuits that operate in the microwave frequency. These types of circuits are based on semiconductor compounds, such as Gallium Arsenide (GaAs), which downsize dramatically, up to 1 - 10 mm2.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine televes.es as primary domain	As far as TV distribution, Televes will complete the range of successful T.0X headends with the presentation of HEXA, compact transmodulators that can allocate up to six satellite transponders into six independent QAM channels. The company will also announce new references for NevoSwitch multiswitches for potential scenarios involving the transition from DBV-T to DVB-T2.

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Show textShow cached sourceOpen source URL	Analog integrated circuits are the most common application for gallium, with optoelectronic devices (mostly laser diodes and light-emitting diodes) as the second largest end use. Gallium has semiconductor properties, especially as gallium arsendite (GaAs).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	Reines Gallium ist keine schädliche Substanz bei Hautkontakt durch den Menschen. Es wird häufig berührt, weil man davon beeindruckt ist, dass es in der Hand schmilzt, woraufhin es Flecken auf dieser hinterlässt. Die radioaktive Verbindung 67-Ga-Citrat kann sogar in den Körper eingespritzt werden und für Galliumabtastung ohne schädliche Effekte benutzt werden. Obgleich es nicht schädlich ist, sollte Gallium nicht in großen Dosen gebraucht werden.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	El galio es semejante químicamente al aluminio. Es anfótero, pero poco más ácido que el aluminio. La valencia normal del galio es 3+ y forma hidróxidos, óxidos y sales. El galio funde al contacto con el aire cuando se calienta a 500ºC (930ºF). Reacciona vigorosamente con agua hirviendo, pero ligeramente con agua a temperatura ambiente. Las sales de galio son incoloras; se preparan de manera directa a partir del metal, dado que la purificación de éste es más simple que la de sus sales.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	Circuiti integrati analogici costituiscono l'impiego più comune del gallio, insieme ai dispositivi optoelettronici (soprattutto diodi laser e diodi luminescenti) che sono il secondo inpiego piu' diffuso del gallio. Il gallio ha proprietà semiconduttrici, particolarmente in forma di arsendite di gallio (GaAs), che e' in grado di convertire elettricita' in luce ed è usata nei diodi luminescenti (LED) per la visualizzazione elettronica e di orologi.

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Show textShow cached sourceOpen source URL	GaAs Solar Cell - Flexible Solar Paddle: Approx. 5.3kW(EOL)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine jaxa.jp as primary domain	楕円軌道：2日9周回準回帰軌道（当初計画：静止衛星軌道（東経121度））

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Show textShow cached sourceOpen source URL	Promotion of local initiatives for natural resource protection (PILPRN project), implemented by the NGO GAAS MALI.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine staging.gcca.eu as primary domain	Le Développement de la filière gomme arabique dans la région de Kayes est mis en œuvre par l’ONG AVSF.

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Show textShow cached sourceOpen source URL	The resulting structure is free from dislocations at the interfaces as long as the liquid gold nanodroplet measures less than 40 nm. The researchers are now working on growing GaAs on InAs. They plan to use the technique to grow nanowires with integrated quantum dots that can be positioned at will for new photonic transmitters.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine minatec.org as primary domain	La structure ne présente aucune dislocation aux interfaces quand le diamètre de la nanogoutte d’or est inférieur à 40 nm. Les chercheurs travaillent désormais sur la croissance de GaAs sur InAs. Ils réaliseraient ainsi des boites quantiques intégrées dans des nanofils, positionnées sur demande, pour de nouveaux émetteurs photoniques.

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Show textShow cached sourceOpen source URL	German Association for American Studies (GAAS)
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Show textShow cached sourceOpen source URL	GaAs and GaP Wafer Scribing
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	Ritzen von GaAs- und GaP-Wafern
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	およびGaPウェハーのスクライビング
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	GaAs 和 GaP晶圆划线

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Show textShow cached sourceOpen source URL	Activities of the department are focused on the characterization of materials and structures destined for use in optoelectronics and microelectronics. Major attention has been paid to III-V materials, binaries GaP, InP, GaAs and GaSb, ternaries InGaP, AlGaAs and quaternary InGaAsP.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ufe.cz as primary domain	Výzkumný tým se zaměřuje na studium elektronických a optických jevů na povrchu a rozhraní nanomateriálů vyvolané dopadem fotonů, iontů, elektronů a adsorbcí plynů za účelem jejich využití pro senzorické aplikace, jako zdrojů světelného záření a pro vylepšení nanodiagnostických schopností analytických metod.

  www.labussola.mo.it  

Show textShow cached sourceOpen source URL	Today, ASELSAN’s radar product portfolio includes air defense, reconnaissance and surveillance, airborne imaging and weapon locating radar systems. ASELSAN radar system expertise covers frequency bands L through Ka Band and encompasses advanced radar technologies such as active phased array, GaAs and GaN based Transmit/Receive Modules.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine aselsan.com.tr as primary domain	ASELSAN, 1991 yılında alınmış olan Savunma Sanayi İcra Komitesi kararı doğrultusunda ülkemizin Radar Teknoloji Merkezi olarak Silahlı Kuvvetlerimizin radar ihtiyaçlarının gelişmiş teknolojiye sahip radar sistemleri ile karşılanması için bu alandaki faaliyetlerini artırarak sürdürmektedir.

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Show textShow cached sourceOpen source URL	Information Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Información Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Informazione Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Információ Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Informacja Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Информа́ция Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Informácie Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Informacija Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	Enformasyon Gaas (Eberau)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine strassensuche.at as primary domain	信息 Gaas (Eberau)

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Show textShow cached sourceOpen source URL	Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources
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Show textShow cached sourceOpen source URL	KU PA 10201050-30 A, GaAs-FET Power Amplifier
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  www.frontier.phys.nagoya-u.ac.jp  

Show textShow cached sourceOpen source URL	GaAs Triple Junction cell
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Show textShow cached sourceOpen source URL	Goals of the GAAS
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Show textShow cached sourceOpen source URL	After the antenna input two MGA-81 GaAs MMIC amplifiers follow, one serves the input, the other the output path. The amplifiers ICs can be selected in and out of the signal path by RF switches (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Après l'entrée de l'antenne, deux amplificateurs MMIC MGA-81 GaAs se suivent, l'un sert à l'entrée, l'autre la sortie. Les circuits intégrés des amplificateurs peuvent être sélectionnés dans et hors du parcours du signal par des commutateurs HF (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Dopo l'ingresso dell'antenna sono presenti due amplificatori GaAs MMIC MGA-81, uno serve l'ingresso, l'altro il percorso di uscita. Gli IC amplificatori possono essere inseriti o esclusi dal percorso del segnale tramite gli interruttori RF (SKY13317).

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Show textShow cached sourceOpen source URL	English , Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices , Physica E , vol.42 (10) (p.2655 - 2657) , 2010.09 , R. Kido,A. Satake,and K. Fujiwara
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine research02.jimu.kyutech.ac.jp as primary domain	英語 、 Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices 、 Physica E 、 42巻 10号 （頁 2655 ～ 2657） 、 2010年09月 、 R. Kido,A. Satake,and K. Fujiwara

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Show textShow cached sourceOpen source URL	13. M. M. de Lima, Jr., W. Seidel, F. Alsina and P. V. Santos. Focusing of surface-acoustic-wave fields on [100] GaAs surfaces. Journal of Applied Physics. 94, 7848-7855 (2003).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ejta.org as primary domain	9. A. Gantner, Mathematical modeling and numerical simulation of piezoelectrical agitated surface acoustic waves. Ph.D. Thesis. Faculty of Mathematics and Natural Sciences, University of Augsburg, Germany (2005).

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Show textShow cached sourceOpen source URL	Since the width of the band gap represents a certain energy corresponding to a particular wavelength, one tries to alter the width selective in order to obtain certain colors of light emitting diodes (LED). This may be achieved by combining different materials. Gallium arsenide (GaAs) has a band gap of 1.4 eV (electron volts, at room temperature) and thus emits red light.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine halbleiter.org as primary domain	Da die Breite der Bandlücke einer bestimmten Energie und somit einer bestimmten Wellenlänge entspricht, versucht man, die Bandlücke gezielt zu verändern um so bestimmte Farben bei Leuchtdioden zu erhalten. Dies kann u.a. durch Kombination verschiedener Stoffe erreicht werden. Galliumarsenid (GaAs) hat eine Bandlücke von 1,4 Elektronenvolt (eV, bei Raumtemperatur) und strahlt somit rotes Licht ab.

  signon-project.eu  

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His key contributions are development of the Poisson brackets method of design of nonimaging optics, the development of the SMS design method for nonimaging optics, the first rigorous proof of the Edge Ray Principle for continuous systems, the introduction of a new etendue invariant in the field (for 2D-subdomains of phase space) in nonimaging optics, the calculation of the thermodynamic limits of concentration for non-homogeneous extended sources, and development of the theory and applications of internal and external confinement limits in solar cells, which allowed the construction of a concentration system with GaAs and Si cells

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Miñano ha hecho muchas contribuciones significativas al campo de la óptica sin formación de imagen. Sus trabajos en el área de ópticas para iluminación y concentración son incontables, innovadores y prácticos. Su investigación ha tenido un enorme impacto en el área de los concentradores solares, y en la eficiencia de la iluminación con fuentes LED. Sus contribuciones principales son: el desarrollo del método de diseño de ópticas sin formación de imágenes de lodsparéntesis de Poisson el desarrollo del sistema de diseño SMS para ópticas sin formación de imagen, la primera demostración rigurosa del principio del rayo del borde para sistemas continuos, la introducción de una nueva invariancia en el campo de la eficacia óptica (para subdominios 2D del espacio de fases) en ópticas sin formación de imagen, el cálculo de los límites termodinámicos de la concentración para fuentes extensas no homogéneas, y el desarrollo de la teoría y aplicaciones de los límites de confinamiento interno y externo en células solares, que ha hecho posible la construcción de un sistema de concentración con células de GaAs y Si.