lci – -Translation – Keybot Dictionary

Spacer TTN Translation Network TTN TTN Login Deutsch Français Spacer Help
Source Languages Target Languages
Keybot 67 Results  www.brl.ntt.co.jp  Page 8
  Optical Properties of G...  
Optical Properties of GaAs Quantum Dots Formed in (Al,Ga)As Nanowires
(Al,Ga)Asナノワイヤ中に形成されたGaAs量子ドットの光学特性
  Nanoholes Formed by Rev...  
Cross-sectional SEM images of [011] oriented hole in GaAs (111)A.
GaAs (111)A基板に形成された [011] 方向ナノホールの断面SEM写真
  Carrier-Mediated Opto-M...  
(a) Scanning electron micrograph of the cantilever. The cantilever consists of 100-nm-thick n -GaAs and 200-nm-thick i-GaAs.
(a)カンチレバーのSEM像。カンチレバーは100 nm厚のn-GaAsと200 nm厚のi-GaAsからなる2層構造 を有する。
  Carrier-Mediated Opto-M...  
(a) Scanning electron micrograph of the cantilever. The cantilever consists of 100-nm-thick n -GaAs and 200-nm-thick i-GaAs.
(a)カンチレバーのSEM像。カンチレバーは100 nm厚のn-GaAsと200 nm厚のi-GaAsからなる2層構造 を有する。
  NTT Basic Research Labo...  
Electron correlation in high-mobility two-dimensional electron systems in AlGaAs/GaAs heterostructures are studied through low-temperature transport measurements at high magnetic fields.
ナノメートルオーダの解像度で3次元的な加工・構造作製ができる技術を研究します。 3次元的な電子ビームリソグラフィを用いて、自由度の高い3次元ナノ構造形成技術と これによる3次元ナノデバイスの創製を目指します。
  Nanowires Laterally Gro...  
AFM image of lateral GaAs NWs.
金微粒子を配列させて横方向成長
  Freestanding GaAs Nanow...  
TEM images of free standing GaAs NWs. (a) Single
[3] G. Zhang et al., Jpn. J. Appl. Phys. 49 (2010) 015001.
  Koji Muraki (NTT Basic ...  
Fermi-Level Effect on Ga Self-Diffusion Studied Using (69)GaAs/(69)Ga(71)GaAs Isotope Superlattice
2013 Aspen Winter Conference "Topological States of Matter";
  Koji Muraki (NTT Basic ...  
Fermi-Level Effect on Ga Self-Diffusion Studied Using (69)GaAs/(69)Ga(71)GaAs Isotope Superlattice
2013 Aspen Winter Conference "Topological States of Matter";
  Koji Muraki (NTT Basic ...  
Evidence for Resonant Electron Capture and Charge Buildup in AlGaAs/GaAs Quantum Wells
NMR investigation of the nu = 5/2 fractional quantum Hall state
  Koji Muraki (NTT Basic ...  
Surface Segregation of In Atoms and its Influence on the Energy Levels in InGaAs/GaAs Quantum Wells
Station Q Fall Meeting, Kavli Institute for Theoretical Physics, UCSB, Santa Barbara, December 2011;