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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors, Kenta Watanabe, Daiki Terashima, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Masahiro Ishida, Yoshiharu Anda, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe, Japanese Journal of Applied Physics,Volume 57, Number 6S3, 2018.05, Papers
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SiO2/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors,Kenta Watanabe, Daiki Terashima, Mikito Nozaki, Takahiro Yamada, Satoshi Nakazawa, Masahiro Ishida, Yoshiharu Anda, Tetsuzo Ueda, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe,Japanese Journal of Applied Physics,Volume 57, Number 6S3,2018年05月,学術論文
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