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Show text Show cached source Open source URL	01. February 2017 – InN is a semiconductor material with a direct bandgap of ~0.7 eV and is a promising material for applications in next generation photovoltaics such as hot carrier solar cells. InN nanorods are fabricated by a chemical vapor deposition technique using a vapor-liquid-solid growth method.
Compare text pages Compare HTM pages Open source URL Open target URL Define eam.fau.de as primary domain	01. Februar 2017 – InN is a semiconductor material with a direct bandgap of ~0.7 eV and is a promising material for applications in next generation photovoltaics such as hot carrier solar cells. InN nanorods are fabricated by a chemical vapor deposition technique using a vapor-liquid-solid growth method. The scanning... mehr »

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