gaas – Übersetzung – Keybot-Wörterbuch

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Keybot      1'228 Ergebnisse   230 Domänen   Seite 7
  17 Treffer www.multiplica.com  
IMA EL provides spectrally and spatially resolved electroluminescence images. It was successfully used to investigate spatial distribution of optoelectronic properties of CIS, CIGS, GaAs and perovskite solar cells.
IMA EL fourni des images résolues spectralement et spatialement. Cette plateforme a déjà été employée pour l’étude de la distribution spatiale des propriétés opto-électroniques de cellules solaires à base de CIS, CIGS, GaAs et de pérovskite.
  15 Treffer www.dailysummit.net  
GaAs nanowires
Nanofils de GaAs
  2 Treffer www.sunplazahotel.co.jp  
Highly productive compound semiconductor crystals such as GaAs, InP, germanium or CaF2
hoch produktiven Verbindungshalbleiterkristallen, wie GaAs, InP, Germanium oder CaF2
  3 Treffer www.iis.fraunhofer.de  
SiGe and III-V for professional applications: BiCMOS / SiGe, GaAs MESFET, HEMT und HBT
SiGe and III-V für professionelle Anwendungen: BiCMOS / SiGe, GaAs MESFET, HEMT und HBT
  www.soitec.com  
Acquisition by IntelliEPI of the gallium arsenide (GaAs) epitaxy business from Soitec's Specialty Electronics subsidiary
IntelliEPI acquiert l’activité épitaxie d'arséniure de gallium (GaAs) de la filiale Specialty Electronics de Soitec
  4 Treffer www.deib.polimi.it  
analytical and experimental studies of elemental and compound semiconductor devices (Si, SiC, GaN, GaAs, CdTe, CdZnTe) and organic devices
studi teorico-sperimentali di dispositivi a semiconduttore semplice e composto (Si, SiC, GaN, GaAs, CdTe, CdZnTe) e organici
  67 Treffer www.brl.ntt.co.jp  
Optical Properties of GaAs Quantum Dots Formed in (Al,Ga)As Nanowires
(Al,Ga)Asナノワイヤ中に形成されたGaAs量子ドットの光学特性
  6 Treffer www.nims.go.jp  
COHERENT PHONONS: GaAs
コヒーレントフォノン:ガリウム砒素
  4 Treffer www.ioap.tu-berlin.de  
Atomic structure of closely stacked InAs submonolayer depositions in GaAs
T. Niermann, F. Kießling, M. Lehmann, J.-H. Schulze, T.D. Germann, K. Pötschke, A. Strittmatter, and U.W. Pohl
  3 Treffer www.amerikanistik.uni-bayreuth.de  
German Association for American Studies (GAAS)
Deutsche Gesellschaft für Amerikastudien (DGfA)
  6 Treffer www.lar.lu  
klienditugi@gaas.ee
Вся энергия из одного источника
  12 Treffer www.caminosurf.com  
Luminescent properties of GaAsBi /GaAs double quantum well heterostructures
Strain Engineering of Monoclinic Domains in KxNa1-xNbO3 Epitaxial Layers: A Pathway to Enhanced Piezoelectric Properties
  2 Treffer www.perimeterinstitute.ca  
quantum Hall effect (FQHE). The materials in question include GaAs wide quantum
interactions in a number of low-dimensional systems exhibiting the fractional
  2 Treffer www.alphaitalia.com  
In 1994 Eesti Gaas sold the shares of the state-owned company Propaan to a joint-stock company BKM Kamma, which was dealing with an import of liquefied gas to Estonia at that time.
1994. a müüs Eesti Gaas riikliku aktsiaseltsi Propaan aktsiad aktsiaseltsile BKM Kamma, kes tegeles tollal vedelgaasi sisseveoga Eestisse.
В 1994г Eesti Gaas продал акции государственного предприятия Propaan акционерному обществу BKM Kamma, которое на тот момент занималось импортом сжиженного газа в Эстонию.
  5 Treffer www.chemie.de  
Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
04.04.2013 | Dae-Seon Kim, Sung-Hwa Eo, and Jae-Hyung Jang, Journal of Vacuum Science & Technology B, 2013
  14 Treffer www.scubaqua.com  
Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well, Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa,International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017, 2017.11, International Conference(Non Proceeding)
Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well,Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa,International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017,2017年11月,国際会議(proceedingsなし)
  www.frontier.phys.nagoya-u.ac.jp  
GaAs Triple Junction cell
GaAsトリプルジャンクション型セル
  salanguages.com  
MMIC (Monolithic Microwave Integrated Circuits) overcome the limitations of silicon microchips and opens a new era in the design of electronic components, which are integrated circuits that operate in the microwave frequency. These types of circuits are based on semiconductor compounds, such as Gallium Arsenide (GaAs), which downsize dramatically, up to 1 - 10 mm2.
As far as TV distribution, Televes will complete the range of successful T.0X headends with the presentation of HEXA, compact transmodulators that can allocate up to six satellite transponders into six independent QAM channels. The company will also announce new references for NevoSwitch multiswitches for potential scenarios involving the transition from DBV-T to DVB-T2.
  signon-project.eu  
His key contributions are development of the Poisson brackets method of design of nonimaging optics, the development of the SMS design method for nonimaging optics, the first rigorous proof of the Edge Ray Principle for continuous systems, the introduction of a new etendue invariant in the field (for 2D-subdomains of phase space) in nonimaging optics, the calculation of the thermodynamic limits of concentration for non-homogeneous extended sources, and development of the theory and applications of internal and external confinement limits in solar cells, which allowed the construction of a concentration system with GaAs and Si cells
Miñano ha hecho muchas contribuciones significativas al campo de la óptica sin formación de imagen. Sus trabajos en el área de ópticas para iluminación y concentración son incontables, innovadores y prácticos. Su investigación ha tenido un enorme impacto en el área de los concentradores solares, y en la eficiencia de la iluminación con fuentes LED. Sus contribuciones principales son: el desarrollo del método de diseño de ópticas sin formación de imágenes de lodsparéntesis de Poisson el desarrollo del sistema de diseño SMS para ópticas sin formación de imagen, la primera demostración rigurosa del principio del rayo del borde para sistemas continuos, la introducción de una nueva invariancia en el campo de la eficacia óptica (para subdominios 2D del espacio de fases) en ópticas sin formación de imagen, el cálculo de los límites termodinámicos de la concentración para fuentes extensas no homogéneas, y el desarrollo de la teoría y aplicaciones de los límites de confinamiento interno y externo en células solares, que ha hecho posible la construcción de un sistema de concentración con células de GaAs y Si.
  www.vanwylick.de  
Promotion of local initiatives for natural resource protection (PILPRN project), implemented by the NGO GAAS MALI.
Le Développement de la filière gomme arabique dans la région de Kayes est mis en œuvre par l’ONG AVSF.
  10 Treffer www.bavariaworldwide.de  
Goals of the GAAS
gaasgeorgia@gmail.com
  10 Treffer research02.jimu.kyutech.ac.jp  
English , Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices , Physica E , vol.42 (10) (p.2655 - 2657) , 2010.09 , R. Kido,A. Satake,and K. Fujiwara
英語 、 Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices 、 Physica E 、 42巻 10号 (頁 2655 ~ 2657) 、 2010年09月 、 R. Kido,A. Satake,and K. Fujiwara
  2 Treffer j-deite.jp  
KU PA 10201050-30 A, GaAs-FET Power Amplifier
KU PA 510590-10 A, Leistungsverstärker
  16 Treffer nutritionstudies.org  
Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources
Presented at: Nanostructures: Physics and Technology
  actualincesttube.org  
24/11/13 OÜ Head co-operated with AS Eesti Gaas to work out the business plan for...
04/06/18 Kehtestati Harku Valla ehitustingimusi, miljööväärtuslikke alasid ja...
  2 Treffer assemblysys.com  
Sol Voltaics: GaAs Nanowires for Solar Cells Get $6M
Nissan TeRRA destaca en el Salón de París 2012
Carlos Ghosn en Moncloa i La Zarzuela
  13 Treffer www.dma.jim.osaka-u.ac.jp  
Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers, Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atsushi Koizumi, and Shinji Nozaki, 2012.07, Papers
Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers,Kazuo Uchida, Heisuke Kanaya, Hiroshi Imanishi, Atsushi Koizumi, and Shinji Nozaki,2012年07月,学術論文
  asiangirlvideo.com  
two independent final power amplifiers based on GaAs hybrid circuit,
Каталог - для сетей КТВ и для систем SMATV
  2 Treffer lotusbedding.com  
1 Laser Diodes (GaAs)
Termine I Anfahrt
  www.cloetta.com  
Materials of Photonic Technologies (LiNbO3, Si, Ge, GaAs, InP, Polymers)
Προκήρυξη εκλογών για την ανάδειξη Διευθυντών Τομέων του Τμήματος
  www.oag-bvg.gc.ca  
EXPERIENCED AUDITOR—An individual (whether internal or external to the office) who has practical audit experience and a reasonable understanding of (i) audit processes, (ii) GAAS and applicable legal and regulatory requirements, (iii) the business environment in which the entity operates, and
DOSSIER D’AUDIT — Le ou les fichiers ou autres supports d'information, physiques ou électroniques, contenant les documents qui constituent la documentation relative à une mission d'audit donnée. Le terme « dossier d’audit » désigne le fichier électronique (TeamMate) et toute copie papier des dossiers externes qui contiennent la documentation d’audit (y compris les dossiers papier relatifs à des missions pour lesquelles il n’y a pas de dossier de mission électronique).
  2 Treffer sprinxinternational.com  
The CHRocodile MI5 sensor is perfectly suited to measure thicknesses of Si and GaAs up to 1mm. Transparent films and coatings can be measured up to a thickness of 2,5 mm. The CHRocodile MI5 modular optical sensor works with infrared light and is perfectly suited for thenon-contact thickness measurement of visually non-transparent materials from one side.
Der CHRocodile MI5 Sensor misst die Schichtdicke von Silizium und GaAs-Materialien bis zu 1mm. Transparente Folien und Lacke können bis zu einer Schichtdicke von 2,5 mm gemessen werden. Der Sensor arbeitet mit Infrarotlicht und eignet sich perfekt für die berührungslose Dickenmessung auch visuell nicht transparenter Materialien von einer Seite. Für den Industriellen Einsatz können bis zu 5 Kanäle in einem 19˝ Einschub konfiguriert werden.
  3 Treffer www.cpab-ccrc.ca  
Specifically, our 2011 inspections found deficiencies in the application of GAAS in firms of all sizes. The Big Four firms, which audit 94 per cent of reporting issuers by market capitalization, had a GAAS deficiency rate of 20-26 per cent on the files we inspected.
Ainsi, le travail effectué à l’égard de ces dossiers n’a pas permis d’étayer pleinement l’opinion d’audit, de sorte qu’il a fallu accomplir du travail supplémentaire. Dans quelques cas, l’audit présentait davantage de problèmes fondamentaux, et quelques retraitements ont été nécessaires.
  26 Treffer samurai.nims.go.jp  
T. Kaizu, Y. Imanaka, K. Takehana, T. Takamasu : “Magnetotransport properties of Ytterbium doped AlxGa1-xAs/GaAs two-dimensional electron systems” EP2DS-18/MSS-14 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 42[4] (2010) 1126-1129
2009/12/12 : 木俣基, 山口尚秀, 薩川秀隆, 原田淳之, 小玉恒太, 寺嶋太一, 宇治進也, 今中康貴, 竹端寛治, 高増正, 今井基晴, 佐藤晃, 松田真生, 田島裕之, 内藤俊雄, 稲辺保, 木方邦宏, 李哲虎, 鬼頭聖, 永崎洋, 伊豫彰, 深澤英人, 小堀洋, 播磨尚朝 : “低次元強相関系の強磁場物性測定” 神戸大学物性研究室セミナー
  29 Treffer hilton-batumi.batumihotels.net  
S. Koh, T. Kondo, Y. Shiraki, and R. Ito: “GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices,” J. Cryst. Growth 227−228 (2001) 183−192.
Y. Hase, K. Kumata, S.S. Kano, M. Ohashi, T. Kondo, R. Ito, and Y. Shiraki: “A New Method for Determining the Nonlinear Optical Coefficients of Thin Films,” Appl. Phys. Lett. 61 (1992) 145−146.
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