gaas – -Translation – Keybot Dictionary

  15 Résultats petroleleger.ca  

Montrer texteMontrer source en cacheMontrer URL avec texte source	Information Gaas (Eberau)
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Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Informazione Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Információ Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Informacja Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Информа́ция Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Informácie Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Informacija Gaas (Eberau)
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir strassensuche.at comme domaine prioritaire	Enformasyon Gaas (Eberau)
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  2 Résultats www.perimeterinstitute.ca  

Montrer texteMontrer source en cacheMontrer URL avec texte source	quantum Hall effect (FQHE). The materials in question include GaAs wide quantum
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir perimeterinstitute.ca comme domaine prioritaire	interactions in a number of low-dimensional systems exhibiting the fractional

  40 Résultats toshiba.semicon-storage.com  

Montrer texteMontrer source en cacheMontrer URL avec texte source	C-Band Internally Matched Power GaAs FETs
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir toshiba.semicon-storage.com comme domaine prioritaire	Comunicaciones inalámbricas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir toshiba.semicon-storage.com comme domaine prioritaire	Komunikacja bezprzewodowa

  11 Résultats posada-real-puerto-escondido-puerto-escondido.hotelspuertoescondido.com  

Montrer texteMontrer source en cacheMontrer URL avec texte source	Cruising in Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Drague à Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Homosexuell Cruising in Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Cruising en Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Battuage a Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Pegação em Gaas
Comparer pages textesComparer pages HTMMontrer URL avec texte sourceMontrer URL avec langue cibleDéfinir gays-cruising.com comme domaine prioritaire	Cruisen in Gaas

  salanguages.com  

Show textShow cached sourceOpen source URL	MMIC (Monolithic Microwave Integrated Circuits) overcome the limitations of silicon microchips and opens a new era in the design of electronic components, which are integrated circuits that operate in the microwave frequency. These types of circuits are based on semiconductor compounds, such as Gallium Arsenide (GaAs), which downsize dramatically, up to 1 - 10 mm2.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine televes.es as primary domain	As far as TV distribution, Televes will complete the range of successful T.0X headends with the presentation of HEXA, compact transmodulators that can allocate up to six satellite transponders into six independent QAM channels. The company will also announce new references for NevoSwitch multiswitches for potential scenarios involving the transition from DBV-T to DVB-T2.

  www.hepp.ch  

Show textShow cached sourceOpen source URL	Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lncmi.cnrs.fr as primary domain	Fort dopage en trous de coeurs/nanofils multicouches GaAs/AlAs

  www.cfpc.ca  

Show textShow cached sourceOpen source URL	Gaas, Masoud
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine cfpc.ca as primary domain	Edmonton, AB

  4 Hits www.ioap.tu-berlin.de  

Show textShow cached sourceOpen source URL	Atomic structure of closely stacked InAs submonolayer depositions in GaAs
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ioap.tu-berlin.de as primary domain	T. Niermann, F. Kießling, M. Lehmann, J.-H. Schulze, T.D. Germann, K. Pötschke, A. Strittmatter, and U.W. Pohl

  5 Hits www.chemie.de  

Show textShow cached sourceOpen source URL	Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine chemeurope.com as primary domain	04.04.2013 | Dae-Seon Kim, Sung-Hwa Eo, and Jae-Hyung Jang, Journal of Vacuum Science & Technology B, 2013

  www.saltmoney.org  

Show textShow cached sourceOpen source URL	Dr. Christoph Hassel received one of the Sparkasse Duisburg awards for outstanding dissertations. The title of his dissertation was “Spinabhängiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)”.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine forschungsbericht.uni-due.de as primary domain	Einen der Preise der Sparkasse Duisburg für herausragende Dissertationen hat Dr. Christoph Hassel erhalten. Das Thema der Dissertation lautet „Spinabhängiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)“.

  5 Hits www.morinagamilk.co.jp  

Show textShow cached sourceOpen source URL	The resulting structure is free from dislocations at the interfaces as long as the liquid gold nanodroplet measures less than 40 nm. The researchers are now working on growing GaAs on InAs. They plan to use the technique to grow nanowires with integrated quantum dots that can be positioned at will for new photonic transmitters.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine minatec.org as primary domain	La structure ne présente aucune dislocation aux interfaces quand le diamètre de la nanogoutte d’or est inférieur à 40 nm. Les chercheurs travaillent désormais sur la croissance de GaAs sur InAs. Ils réaliseraient ainsi des boites quantiques intégrées dans des nanofils, positionnées sur demande, pour de nouveaux émetteurs photoniques.

  2 Hits nb.lv  

Show textShow cached sourceOpen source URL	ABTF's mandate is to carry out all of your audit and year end financial statement needs efficiently in accordance with French GAAS and International Audit Standards (ISAs). In doing so, we tailor our services to each client's individual needs.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine abtf-france.com as primary domain	ABTF garantiert Ihnen eine effiziente Durchführung der Jahresabschlussprüfung nach französischem und internationalem Recht. Dabei orientieren wir uns an den Belangen jedes einzelnen Mandanten und betreuen Sie somit das ganze Jahr und nicht nur zur Jahresabschlussprüfung.

  2 Hits www.irdq.ca  

Show textShow cached sourceOpen source URL	Si <111>, Oxide, Nitride, GaAs
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  2 Hits www.nj-chishun.com  

Show textShow cached sourceOpen source URL	Strong electric fields: Reheating electron gas. Drift velocity saturation in Ge, Si. Interband transitions in GaAs, negative differential conductivity. Drift velocity “splash”. Gunn effect. Electrostatic ionization.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ee.kpi.ua as primary domain	ПРОЦЕССЫ В СИЛЬНЫХ ЭЛЕКТРИЧЕСКИХ ПОЛЯХ: Разогрев электронного газа. Насыщение дрейфовой скорости в Ge, Si. Междолинные переходы в GaAs, отрицательная дифференциальная проводимость. "Всплеск" дрейфовой скорости. Эффект Ганна. Электростатическая ионизация, эффект Зинера. Термоэлектронная ионизация. Автоэлектронная эмиссия, острийные катоды. Лавинные процессы:

  2 Hits www.unibas.ch  

Show textShow cached sourceOpen source URL	Art view of a semiconductor InAs/GaAs quantum dot (In, Ga and As respectively in yellow, blue and purple). Two remote nuclear spins (yellow arrows) are coupled via the spin of an electron delocalized over the quantum dot (red).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine unibas.ch as primary domain	Illustration eines Halbleiter-Quantenpunkts aus Indiumarsenid/Galliumarsenid (Indium, Gallium, Arsen in gelb, blau und lila). Zwei entferne Kernspins (gelbe Pfeile) sind durch den Spin eines Elektrons miteinander gekoppelt, das um die Atome im roten Bereich kreist. (Bild: Universität Basel, Departement Physik)

  2 Hits www.zumsteinbock.com  

Show textShow cached sourceOpen source URL	After the antenna input two MGA-81 GaAs MMIC amplifiers follow, one serves the input, the other the output path. The amplifiers ICs can be selected in and out of the signal path by RF switches (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Après l'entrée de l'antenne, deux amplificateurs MMIC MGA-81 GaAs se suivent, l'un sert à l'entrée, l'autre la sortie. Les circuits intégrés des amplificateurs peuvent être sélectionnés dans et hors du parcours du signal par des commutateurs HF (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Dopo l'ingresso dell'antenna sono presenti due amplificatori GaAs MMIC MGA-81, uno serve l'ingresso, l'altro il percorso di uscita. Gli IC amplificatori possono essere inseriti o esclusi dal percorso del segnale tramite gli interruttori RF (SKY13317).

  4 Hits www.lumasenseinc.com  

Show textShow cached sourceOpen source URL	FOT and GaAs Probes
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lumasenseinc.com as primary domain	Instruments and Packages
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lumasenseinc.com as primary domain	Instrumentos e componentes
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  14 Hits www.scubaqua.com  

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Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well, Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa，International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017, 2017.11, International Conference(Non Proceeding)

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Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well，Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa，International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017，2017年11月，国際会議（proceedingsなし）

  4 Hits ackordscentralen.se  

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The speed of optical switches is limited by the properties of the underlying materials. In modern science and technology, cavities fabricated from semiconductor materials such as GaAs and AlAs have become highly popular.

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De snelheid van de optische schakelaars wordt beperkt door de eigenschappen van de onderliggende materialen. In moderne wetenschap en technologie worden vaak halfgeleidende materialen zoals GaAs en AlAs gebruikt met kleine holtes erin. Die kunnen op een schaal van enkele micrometers gemaakt worden (slechts één honderdste van de dikte van een mensenhaar). Deze 'microholtes' kunnen geïntegreerd worden op chips, maar ze worden ook gebruikt om e-mail, internet en Tv-signalen te verzenden als optische signalen.

  breathefree.com  

Show textShow cached sourceOpen source URL	G. Bussone, H. Schäfer-Eberwein, E. Dimakis, A. Biermanns, D. Carbone, A. Tahraoui, L. Geelhaar, P. Haring Bolívar, T. U. Schülli, and U. Pietsch "Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates," Nano Letters vol.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine hqe.eti.uni-siegen.de as primary domain	G. Bussone, H. Schäfer-Eberwein, E. Dimakis, A. Biermanns, D. Carbone, A. Tahraoui, L. Geelhaar, P. Haring Bolívar, T. U. Schülli, and U. Pietsch "Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates," Nano Letters vol. 15, 2 , pp. 981-989 (2015) [doi.org] [www] [BibTeX]

  2 Hits www.tobelisa.be  

Show textShow cached sourceOpen source URL	Strong electric fields: Reheating electron gas. Drift velocity saturation in Ge, Si. Interband transitions in GaAs, negative differential conductivity. Drift velocity “splash”. Gunn effect. Electrostatic ionization.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine phbme.kpi.ua as primary domain	ПРОЦЕССЫ В СИЛЬНЫХ ЭЛЕКТРИЧЕСКИХ ПОЛЯХ: Разогрев электронного газа. Насыщение дрейфовой скорости в Ge, Si. Междолинные переходы в GaAs, отрицательная дифференциальная проводимость. "Всплеск" дрейфовой скорости. Эффект Ганна. Электростатическая ионизация, эффект Зинера. Термоэлектронная ионизация. Автоэлектронная эмиссия, острийные катоды. Лавинные процессы:

  www.lovail.ca  

Show textShow cached sourceOpen source URL	GaAs and GaP Wafer Scribing
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	Ritzen von GaAs- und GaP-Wafern
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	およびGaPウェハーのスクライビング
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	GaAs 和 GaP晶圆划线

  www.lenntech.com  

Show textShow cached sourceOpen source URL	Analog integrated circuits are the most common application for gallium, with optoelectronic devices (mostly laser diodes and light-emitting diodes) as the second largest end use. Gallium has semiconductor properties, especially as gallium arsendite (GaAs).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	Reines Gallium ist keine schädliche Substanz bei Hautkontakt durch den Menschen. Es wird häufig berührt, weil man davon beeindruckt ist, dass es in der Hand schmilzt, woraufhin es Flecken auf dieser hinterlässt. Die radioaktive Verbindung 67-Ga-Citrat kann sogar in den Körper eingespritzt werden und für Galliumabtastung ohne schädliche Effekte benutzt werden. Obgleich es nicht schädlich ist, sollte Gallium nicht in großen Dosen gebraucht werden.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	El galio es semejante químicamente al aluminio. Es anfótero, pero poco más ácido que el aluminio. La valencia normal del galio es 3+ y forma hidróxidos, óxidos y sales. El galio funde al contacto con el aire cuando se calienta a 500ºC (930ºF). Reacciona vigorosamente con agua hirviendo, pero ligeramente con agua a temperatura ambiente. Las sales de galio son incoloras; se preparan de manera directa a partir del metal, dado que la purificación de éste es más simple que la de sus sales.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lenntech.com as primary domain	Circuiti integrati analogici costituiscono l'impiego più comune del gallio, insieme ai dispositivi optoelettronici (soprattutto diodi laser e diodi luminescenti) che sono il secondo inpiego piu' diffuso del gallio. Il gallio ha proprietà semiconduttrici, particolarmente in forma di arsendite di gallio (GaAs), che e' in grado di convertire elettricita' in luce ed è usata nei diodi luminescenti (LED) per la visualizzazione elettronica e di orologi.

  signon-project.eu  

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His key contributions are development of the Poisson brackets method of design of nonimaging optics, the development of the SMS design method for nonimaging optics, the first rigorous proof of the Edge Ray Principle for continuous systems, the introduction of a new etendue invariant in the field (for 2D-subdomains of phase space) in nonimaging optics, the calculation of the thermodynamic limits of concentration for non-homogeneous extended sources, and development of the theory and applications of internal and external confinement limits in solar cells, which allowed the construction of a concentration system with GaAs and Si cells

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Miñano ha hecho muchas contribuciones significativas al campo de la óptica sin formación de imagen. Sus trabajos en el área de ópticas para iluminación y concentración son incontables, innovadores y prácticos. Su investigación ha tenido un enorme impacto en el área de los concentradores solares, y en la eficiencia de la iluminación con fuentes LED. Sus contribuciones principales son: el desarrollo del método de diseño de ópticas sin formación de imágenes de lodsparéntesis de Poisson el desarrollo del sistema de diseño SMS para ópticas sin formación de imagen, la primera demostración rigurosa del principio del rayo del borde para sistemas continuos, la introducción de una nueva invariancia en el campo de la eficacia óptica (para subdominios 2D del espacio de fases) en ópticas sin formación de imagen, el cálculo de los límites termodinámicos de la concentración para fuentes extensas no homogéneas, y el desarrollo de la teoría y aplicaciones de los límites de confinamiento interno y externo en células solares, que ha hecho posible la construcción de un sistema de concentración con células de GaAs y Si.

  6 Hits www.lar.lu  

Show textShow cached sourceOpen source URL	klienditugi@gaas.ee
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine gaas.ee as primary domain	Вся энергия из одного источника

  5 Hits www.lelieuunique.com  

Show textShow cached sourceOpen source URL	Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine qdot.iis.u-tokyo.ac.jp as primary domain	Effect of metal side claddings on emission decay rates of single quantum dots embedded in a sub-wavelength semiconductor waveguide

  14 Hits www.satohshuzo.co.jp  

Show textShow cached sourceOpen source URL	Now accepting GAAS Scholarship applications!
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine aiacanada.com as primary domain	Date limite : le 15 juin 2016

  hc-sc.gc.ca  

Show textShow cached sourceOpen source URL	Gallium arsenide (GaAs)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine hc-sc.gc.ca as primary domain	Arseniure de gallium

  www.jaxa.jp  

Show textShow cached sourceOpen source URL	GaAs Solar Cell - Flexible Solar Paddle: Approx. 5.3kW(EOL)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine jaxa.jp as primary domain	楕円軌道：2日9周回準回帰軌道（当初計画：静止衛星軌道（東経121度））

  16 Hits nutritionstudies.org  

Show textShow cached sourceOpen source URL	Hybrid GaAs/AlGaAs nanowire --- quantum dot system for single photon sources
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine man.dtu.dk as primary domain	Presented at: Nanostructures: Physics and Technology

  www.hc-sc.gc.ca  

Show textShow cached sourceOpen source URL	Gallium arsenide (GaAs)
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine hc-sc.gc.ca as primary domain	Arseniure de gallium

  www.frontier.phys.nagoya-u.ac.jp  

Show textShow cached sourceOpen source URL	GaAs Triple Junction cell
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine frontier.phys.nagoya-u.ac.jp as primary domain	GaAsトリプルジャンクション型セル

  2 Hits www.philhist.uni-augsburg.de  

Show textShow cached sourceOpen source URL	German Association for American Studies (GAAS)
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  www.vanwylick.de  

Show textShow cached sourceOpen source URL	Promotion of local initiatives for natural resource protection (PILPRN project), implemented by the NGO GAAS MALI.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine staging.gcca.eu as primary domain	Le Développement de la filière gomme arabique dans la région de Kayes est mis en œuvre par l’ONG AVSF.

  www.eschsintzel.ch  

Show textShow cached sourceOpen source URL	Since the width of the band gap represents a certain energy corresponding to a particular wavelength, one tries to alter the width selective in order to obtain certain colors of light emitting diodes (LED). This may be achieved by combining different materials. Gallium arsenide (GaAs) has a band gap of 1.4 eV (electron volts, at room temperature) and thus emits red light.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine halbleiter.org as primary domain	Da die Breite der Bandlücke einer bestimmten Energie und somit einer bestimmten Wellenlänge entspricht, versucht man, die Bandlücke gezielt zu verändern um so bestimmte Farben bei Leuchtdioden zu erhalten. Dies kann u.a. durch Kombination verschiedener Stoffe erreicht werden. Galliumarsenid (GaAs) hat eine Bandlücke von 1,4 Elektronenvolt (eV, bei Raumtemperatur) und strahlt somit rotes Licht ab.

  www.reviveourhearts.com  

Show textShow cached sourceOpen source URL	Activities of the department are focused on the characterization of materials and structures destined for use in optoelectronics and microelectronics. Major attention has been paid to III-V materials, binaries GaP, InP, GaAs and GaSb, ternaries InGaP, AlGaAs and quaternary InGaAsP.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ufe.cz as primary domain	Výzkumný tým se zaměřuje na studium elektronických a optických jevů na povrchu a rozhraní nanomateriálů vyvolané dopadem fotonů, iontů, elektronů a adsorbcí plynů za účelem jejich využití pro senzorické aplikace, jako zdrojů světelného záření a pro vylepšení nanodiagnostických schopností analytických metod.

  www.labussola.mo.it  

Show textShow cached sourceOpen source URL	Today, ASELSAN’s radar product portfolio includes air defense, reconnaissance and surveillance, airborne imaging and weapon locating radar systems. ASELSAN radar system expertise covers frequency bands L through Ka Band and encompasses advanced radar technologies such as active phased array, GaAs and GaN based Transmit/Receive Modules.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine aselsan.com.tr as primary domain	ASELSAN, 1991 yılında alınmış olan Savunma Sanayi İcra Komitesi kararı doğrultusunda ülkemizin Radar Teknoloji Merkezi olarak Silahlı Kuvvetlerimizin radar ihtiyaçlarının gelişmiş teknolojiye sahip radar sistemleri ile karşılanması için bu alandaki faaliyetlerini artırarak sürdürmektedir.

  2 Hits j-deite.jp  

Show textShow cached sourceOpen source URL	KU PA 10201050-30 A, GaAs-FET Power Amplifier
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Its radiation has unconventional (for existing lasers) spectro-dynamical and correlation properties, since it is produced in a low-Q multi-mode resonator, where the lifetime of photons is short compared with the lifetime of an optical polarization of the quantum dots (E. R. Kocharovskaya, V. V. Kocharovsky, Vl. V. Kocharovsky). Such lasers, which are called D-class lasers and have not been realized before, can be made of the GaAs/InGaAs heterostructures with several layers of submonolayer quantum dots.

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Впервые показано также, что на основе последних достижений нанотехнологии выращивания массивов субмонослойных квантовых точек и разработанных в ИПФ методов нелинейной динамической селекции мод благодаря распределенной обратной связи возможно создание уникального сверхизлучающего гетеролазера миллиметровой длины с КПД более 50 %. Он способен генерировать последовательности мощных (мультиваттных) сверхкоротких (пикосекундных) импульсов когерентного излучения при непрерывной инжекционной или оптической накачке в отсутствие специальной синхронизации мод и рассчитан на решение сложных задач динамической спектроскопии и обработки информации. Его излучение обладает необычными (для существующих лазеров) корреляционными и спектрально-динамическими свойствами, поскольку возникает в низкодобротном многомодовом резонаторе, время жизни фотонов в котором мало по сравнению со временем жизни оптической поляризации квантовых точек (Е. Р. Кочаровская, В. В. Кочаровский, Вл. В. Кочаровский). Для подобных лазеров, называемых лазерами класса D и ранее не реализованных, спроектированы (совместно с ФТИ РАН) необходимые GaAs/InGaAs-гетероструктуры с несколькими слоями субмонослойных квантовых точек, обладающие рекордной спектральной и пространственной плотностью состояний с достаточно большим временем релаксации их оптической поляризации.

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Show textShow cached sourceOpen source URL	English , Photoluminescence dynamics due to exciton and free carrier transport in GaAs/AlAs superlattices , Physica E , vol.42 (10) (p.2655 - 2657) , 2010.09 , R. Kido,A. Satake,and K. Fujiwara
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Show textShow cached sourceOpen source URL	13. M. M. de Lima, Jr., W. Seidel, F. Alsina and P. V. Santos. Focusing of surface-acoustic-wave fields on [100] GaAs surfaces. Journal of Applied Physics. 94, 7848-7855 (2003).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ejta.org as primary domain	9. A. Gantner, Mathematical modeling and numerical simulation of piezoelectrical agitated surface acoustic waves. Ph.D. Thesis. Faculty of Mathematics and Natural Sciences, University of Augsburg, Germany (2005).

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Show textShow cached sourceOpen source URL	24/11/13 OÜ Head co-operated with AS Eesti Gaas to work out the business plan for...
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Show textShow cached sourceOpen source URL	Goals of the GAAS
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EXPERIENCED AUDITOR—An individual (whether internal or external to the office) who has practical audit experience and a reasonable understanding of (i) audit processes, (ii) GAAS and applicable legal and regulatory requirements, (iii) the business environment in which the entity operates, and

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DOSSIER D’AUDIT — Le ou les fichiers ou autres supports d'information, physiques ou électroniques, contenant les documents qui constituent la documentation relative à une mission d'audit donnée. Le terme « dossier d’audit » désigne le fichier électronique (TeamMate) et toute copie papier des dossiers externes qui contiennent la documentation d’audit (y compris les dossiers papier relatifs à des missions pour lesquelles il n’y a pas de dossier de mission électronique).

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The CHRocodile MI5 sensor is perfectly suited to measure thicknesses of Si and GaAs up to 1mm. Transparent films and coatings can be measured up to a thickness of 2,5 mm. The CHRocodile MI5 modular optical sensor works with infrared light and is perfectly suited for thenon-contact thickness measurement of visually non-transparent materials from one side.

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Der CHRocodile MI5 Sensor misst die Schichtdicke von Silizium und GaAs-Materialien bis zu 1mm. Transparente Folien und Lacke können bis zu einer Schichtdicke von 2,5 mm gemessen werden. Der Sensor arbeitet mit Infrarotlicht und eignet sich perfekt für die berührungslose Dickenmessung auch visuell nicht transparenter Materialien von einer Seite. Für den Industriellen Einsatz können bis zu 5 Kanäle in einem 19˝ Einschub konfiguriert werden.

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The work presented in this thesis is initiated by this major goal of merging III-V semiconductor technology with Si technology. The focus was primitively placed on development of a Si-compatible tool for chemical vapor deposition (CVD) of gallium arsenide (GaAs).

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gebied. Het werk dat gepresenteerd wordt in deze thesis is tot stand gekomen in de licht van dit doel: het samenbrengen van III-V halfgeleider technologie met Si technologie. De focus was eerst gelegd op de ontwikkeling van een Si compatible apparaat voor Chemical VaporDeposition (CVD) van galliumarseen (GaAs). Hiervoor is een Si/SiGe CVD reactor, de ASMI Epsilon 2000, uitgebreid met een TriMethylGallium (TMGa) bubblersysteem met extra buizen om de depositie van zowel GaAs als de standaard Si en SiGe deposities toe te staan. Van groot belang was het toepassen van een lage arseenconcentratie (AsH3): 0.7%, een minstens tien keer zo lage hoeveelheid als wat normaal wordt gebruikt in MOCVDs. De bijbehorende lage concentratie van TMGa betekent dat de vervuiling van de reactor kamer met gallium of arseen zo laag is dat de gebruikelijke hoge kwaliteit van gedopeerd Si- en SiGe-deposities nog steeds kunnen worden behaald in dezelfde reactorkamer. Hierdoor kon het onderzoek gericht op het ontwikkelen van unieke halvegeleidercomponenten waar de samenvoeging van materialen zoals gallium (Ga), arseen (As) en boor (B), met Si en Ge, in een de zelfde reactor, worden bewerkstelligd. Voor het eerst konden depositiecycli met lagen van verschillende combinaties van deze III, IV, V elementen worden uitgevoerd zonder vacuümonderbreking. Dit was belangrijk, niet alleen voor de groei van goede kwaliteit GaAs epitaxie en kristallijn Ge-op-Si, maar ook voor het realiseren van junctiediodes met deze materialen. Voornamelijk de realisatie van p+n Si diodes van uitzonderlijke kwaliteit was mogelijk gemaakt door de depositie van puur gallium (PureGa) of puur boor (PureB) voor het p+ gebied. De combinatie van zowel PureGa als PureB technieken op kristallijn Ge-op-Si is geïmplementeerd voor ideale Ge-op-Si p+n juncties met wereldrecord lage verzadigingsstromen. De term PureGaB is geïntroduceerd voor deze technologie.

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Show textShow cached sourceOpen source URL	Specifically, our 2011 inspections found deficiencies in the application of GAAS in firms of all sizes. The Big Four firms, which audit 94 per cent of reporting issuers by market capitalization, had a GAAS deficiency rate of 20-26 per cent on the files we inspected.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine cpab-ccrc.ca as primary domain	Ainsi, le travail effectué à l’égard de ces dossiers n’a pas permis d’étayer pleinement l’opinion d’audit, de sorte qu’il a fallu accomplir du travail supplémentaire. Dans quelques cas, l’audit présentait davantage de problèmes fondamentaux, et quelques retraitements ont été nécessaires.

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Its radiation has unconventional (for existing lasers) spectro-dynamical and correlation properties, since it is produced in a low-Q multi-mode resonator, where the lifetime of photons is short compared with the lifetime of an optical polarization of the quantum dots (E. R. Kocharovskaya, V. V. Kocharovsky, Vl. V. Kocharovsky). Such lasers, which are called D-class lasers and have not been realized before, can be made of the GaAs/InGaAs heterostructures with several layers of submonolayer quantum dots.

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Впервые показано также, что на основе последних достижений нанотехнологии выращивания массивов субмонослойных квантовых точек и разработанных в ИПФ методов нелинейной динамической селекции мод благодаря распределенной обратной связи возможно создание уникального сверхизлучающего гетеролазера миллиметровой длины с КПД более 50 %. Он способен генерировать последовательности мощных (мультиваттных) сверхкоротких (пикосекундных) импульсов когерентного излучения при непрерывной инжекционной или оптической накачке в отсутствие специальной синхронизации мод и рассчитан на решение сложных задач динамической спектроскопии и обработки информации. Его излучение обладает необычными (для существующих лазеров) корреляционными и спектрально-динамическими свойствами, поскольку возникает в низкодобротном многомодовом резонаторе, время жизни фотонов в котором мало по сравнению со временем жизни оптической поляризации квантовых точек (Е. Р. Кочаровская, В. В. Кочаровский, Вл. В. Кочаровский). Для подобных лазеров, называемых лазерами класса D и ранее не реализованных, спроектированы (совместно с ФТИ РАН) необходимые GaAs/InGaAs-гетероструктуры с несколькими слоями субмонослойных квантовых точек, обладающие рекордной спектральной и пространственной плотностью состояний с достаточно большим временем релаксации их оптической поляризации.

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Show textShow cached sourceOpen source URL	The MVV 1296-VOX has two stages to gain enough amplification for longer feed lines, also. The input stage is equipped with a low-noise microwave GaAs FET, the second stage uses a microwave IC (MMIC). The amplification is continuously adjustable, which helps to adjust to particular cable lengths.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.com as primary domain	The MVV 1296-VOX mast pre-amp is a low-noise antenna pre-amplifier in a double-shelled housing. The outer housing made of ABS is weatherproof and suited for mast mounting. The inner metal housing ensures a high shielding factor against unwanted irradiation and protects the components of the amplifier against harmful environmental influences effectively.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.com as primary domain	L'MVV 1296-VOX è un preamplificatore d'antennaa a basso rumore in un alloggiamento a doppia schermatura. L'involucro esterno in ABS è resistente alle intemperie e adatto per il montaggio a palo. Il contenitore metallico interno assicura un elevato fattore di schermatura contro le interferennze e protegge efficacemente i componenti dell'amplificatore dalle condizioni ambientali più estreme.