gaas – -Translation – Keybot Dictionary

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Show textShow cached sourceOpen source URL	MMIC (Monolithic Microwave Integrated Circuits) overcome the limitations of silicon microchips and opens a new era in the design of electronic components, which are integrated circuits that operate in the microwave frequency. These types of circuits are based on semiconductor compounds, such as Gallium Arsenide (GaAs), which downsize dramatically, up to 1 - 10 mm2.
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Show textShow cached sourceOpen source URL	Unintentional High-Density p-Type Modulation Doping of a GaAs/AlAs Core–Multishell Nanowire
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lncmi.cnrs.fr as primary domain	Fort dopage en trous de coeurs/nanofils multicouches GaAs/AlAs

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Show textShow cached sourceOpen source URL	Gaas, Masoud
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine cfpc.ca as primary domain	Edmonton, AB

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Show textShow cached sourceOpen source URL	Atomic structure of closely stacked InAs submonolayer depositions in GaAs
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ioap.tu-berlin.de as primary domain	T. Niermann, F. Kießling, M. Lehmann, J.-H. Schulze, T.D. Germann, K. Pötschke, A. Strittmatter, and U.W. Pohl

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Show textShow cached sourceOpen source URL	Direct integration of subwavelength structure on a GaAs solar cell by using colloidal lithography and dry etching process
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine chemeurope.com as primary domain	04.04.2013 | Dae-Seon Kim, Sung-Hwa Eo, and Jae-Hyung Jang, Journal of Vacuum Science & Technology B, 2013

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Show textShow cached sourceOpen source URL	Dr. Christoph Hassel received one of the Sparkasse Duisburg awards for outstanding dissertations. The title of his dissertation was “Spinabhängiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)”.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine forschungsbericht.uni-due.de as primary domain	Einen der Preise der Sparkasse Duisburg für herausragende Dissertationen hat Dr. Christoph Hassel erhalten. Das Thema der Dissertation lautet „Spinabhängiger Transport in epitaktischen Fe-Leiterbahnen auf GaAs(110)“.

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Show textShow cached sourceOpen source URL	The resulting structure is free from dislocations at the interfaces as long as the liquid gold nanodroplet measures less than 40 nm. The researchers are now working on growing GaAs on InAs. They plan to use the technique to grow nanowires with integrated quantum dots that can be positioned at will for new photonic transmitters.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine minatec.org as primary domain	La structure ne présente aucune dislocation aux interfaces quand le diamètre de la nanogoutte d’or est inférieur à 40 nm. Les chercheurs travaillent désormais sur la croissance de GaAs sur InAs. Ils réaliseraient ainsi des boites quantiques intégrées dans des nanofils, positionnées sur demande, pour de nouveaux émetteurs photoniques.

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Show textShow cached sourceOpen source URL	ABTF's mandate is to carry out all of your audit and year end financial statement needs efficiently in accordance with French GAAS and International Audit Standards (ISAs). In doing so, we tailor our services to each client's individual needs.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine abtf-france.com as primary domain	ABTF garantiert Ihnen eine effiziente Durchführung der Jahresabschlussprüfung nach französischem und internationalem Recht. Dabei orientieren wir uns an den Belangen jedes einzelnen Mandanten und betreuen Sie somit das ganze Jahr und nicht nur zur Jahresabschlussprüfung.

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Show textShow cached sourceOpen source URL	Si <111>, Oxide, Nitride, GaAs
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Show textShow cached sourceOpen source URL	Strong electric fields: Reheating electron gas. Drift velocity saturation in Ge, Si. Interband transitions in GaAs, negative differential conductivity. Drift velocity “splash”. Gunn effect. Electrostatic ionization.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ee.kpi.ua as primary domain	ПРОЦЕССЫ В СИЛЬНЫХ ЭЛЕКТРИЧЕСКИХ ПОЛЯХ: Разогрев электронного газа. Насыщение дрейфовой скорости в Ge, Si. Междолинные переходы в GaAs, отрицательная дифференциальная проводимость. "Всплеск" дрейфовой скорости. Эффект Ганна. Электростатическая ионизация, эффект Зинера. Термоэлектронная ионизация. Автоэлектронная эмиссия, острийные катоды. Лавинные процессы:

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Show textShow cached sourceOpen source URL	Art view of a semiconductor InAs/GaAs quantum dot (In, Ga and As respectively in yellow, blue and purple). Two remote nuclear spins (yellow arrows) are coupled via the spin of an electron delocalized over the quantum dot (red).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine unibas.ch as primary domain	Illustration eines Halbleiter-Quantenpunkts aus Indiumarsenid/Galliumarsenid (Indium, Gallium, Arsen in gelb, blau und lila). Zwei entferne Kernspins (gelbe Pfeile) sind durch den Spin eines Elektrons miteinander gekoppelt, das um die Atome im roten Bereich kreist. (Bild: Universität Basel, Departement Physik)

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Show textShow cached sourceOpen source URL	After the antenna input two MGA-81 GaAs MMIC amplifiers follow, one serves the input, the other the output path. The amplifiers ICs can be selected in and out of the signal path by RF switches (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Après l'entrée de l'antenne, deux amplificateurs MMIC MGA-81 GaAs se suivent, l'un sert à l'entrée, l'autre la sortie. Les circuits intégrés des amplificateurs peuvent être sélectionnés dans et hors du parcours du signal par des commutateurs HF (SKY13317).
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine wimo.de as primary domain	Dopo l'ingresso dell'antenna sono presenti due amplificatori GaAs MMIC MGA-81, uno serve l'ingresso, l'altro il percorso di uscita. Gli IC amplificatori possono essere inseriti o esclusi dal percorso del segnale tramite gli interruttori RF (SKY13317).

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Show textShow cached sourceOpen source URL	FOT and GaAs Probes
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine lumasenseinc.com as primary domain	Instruments and Packages
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Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well, Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa，International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017, 2017.11, International Conference(Non Proceeding)

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Electrical Transport in Low Dimensional Systems Fabricated in a (110) GaAs Quantum Well，Tomohiro Nakagawa, Rio Fukai, Yuji Sakai, Haruki Kiyama, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck,and Akira Oiwa，International School and Symposium on nanoscale transport and photonics (ISNTT2017), NTT Atsugi R&D Center, Atsugi Kanagawa, JAPAN, Nov 13-17, 2017，2017年11月，国際会議（proceedingsなし）

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The speed of optical switches is limited by the properties of the underlying materials. In modern science and technology, cavities fabricated from semiconductor materials such as GaAs and AlAs have become highly popular.

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De snelheid van de optische schakelaars wordt beperkt door de eigenschappen van de onderliggende materialen. In moderne wetenschap en technologie worden vaak halfgeleidende materialen zoals GaAs en AlAs gebruikt met kleine holtes erin. Die kunnen op een schaal van enkele micrometers gemaakt worden (slechts één honderdste van de dikte van een mensenhaar). Deze 'microholtes' kunnen geïntegreerd worden op chips, maar ze worden ook gebruikt om e-mail, internet en Tv-signalen te verzenden als optische signalen.

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Show textShow cached sourceOpen source URL	G. Bussone, H. Schäfer-Eberwein, E. Dimakis, A. Biermanns, D. Carbone, A. Tahraoui, L. Geelhaar, P. Haring Bolívar, T. U. Schülli, and U. Pietsch "Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates," Nano Letters vol.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine hqe.eti.uni-siegen.de as primary domain	G. Bussone, H. Schäfer-Eberwein, E. Dimakis, A. Biermanns, D. Carbone, A. Tahraoui, L. Geelhaar, P. Haring Bolívar, T. U. Schülli, and U. Pietsch "Correlation of Electrical and Structural Properties of Single As-Grown GaAs Nanowires on Si (111) Substrates," Nano Letters vol. 15, 2 , pp. 981-989 (2015) [doi.org] [www] [BibTeX]

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Show textShow cached sourceOpen source URL	Strong electric fields: Reheating electron gas. Drift velocity saturation in Ge, Si. Interband transitions in GaAs, negative differential conductivity. Drift velocity “splash”. Gunn effect. Electrostatic ionization.
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine phbme.kpi.ua as primary domain	ПРОЦЕССЫ В СИЛЬНЫХ ЭЛЕКТРИЧЕСКИХ ПОЛЯХ: Разогрев электронного газа. Насыщение дрейфовой скорости в Ge, Si. Междолинные переходы в GaAs, отрицательная дифференциальная проводимость. "Всплеск" дрейфовой скорости. Эффект Ганна. Электростатическая ионизация, эффект Зинера. Термоэлектронная ионизация. Автоэлектронная эмиссия, острийные катоды. Лавинные процессы:

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Show textShow cached sourceOpen source URL	GaAs and GaP Wafer Scribing
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	Ritzen von GaAs- und GaP-Wafern
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	およびGaPウェハーのスクライビング
Compare text pagesCompare HTM pagesOpen source URLOpen target URLDefine ipgphotonics.com as primary domain	GaAs 和 GaP晶圆划线